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RTQ035N03TR Rohm Semiconductor
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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872+ | 0.18 EUR |
913+ | 0.16 EUR |
1000+ | 0.15 EUR |
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Technische Details RTQ035N03TR Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V.
Weitere Produktangebote RTQ035N03TR nach Preis ab 0.39 EUR bis 1 EUR
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RTQ035N03TR | Hersteller : Rohm Semiconductor |
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auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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RTQ035N03TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V |
auf Bestellung 659 Stücke: Lieferzeit 10-14 Tag (e) |
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RTQ035N03TR | Hersteller : ROHM |
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auf Bestellung 342200 Stücke: Lieferzeit 21-28 Tag (e) |
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RTQ035N03TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V |
Produkt ist nicht verfügbar |
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RTQ035N03TR | Hersteller : ROHM Semiconductor |
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Produkt ist nicht verfügbar |