![RTQ025P02TR RTQ025P02TR](https://www.mouser.com/images/rohmsemiconductor/lrg/SOT_457T_6_DSL.jpg)
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1 EUR |
10+ | 0.88 EUR |
100+ | 0.6 EUR |
500+ | 0.5 EUR |
1000+ | 0.43 EUR |
3000+ | 0.38 EUR |
6000+ | 0.36 EUR |
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Technische Details RTQ025P02TR ROHM Semiconductor
Description: MOSFET P-CH 20V 2.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V.
Weitere Produktangebote RTQ025P02TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RTQ025P02-TR |
auf Bestellung 501000 Stücke: Lieferzeit 21-28 Tag (e) |
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RTQ025P02TR | Hersteller : ROH |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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RTQ025P02TR | Hersteller : ROHM |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RTQ025P02 TR | Hersteller : ROHM | SOT26/SOT363 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RTQ025P02TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V |
Produkt ist nicht verfügbar |
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RTQ025P02TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 10 V |
Produkt ist nicht verfügbar |