RTF016N05FRATL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 45V 1.6A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
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Technische Details RTF016N05FRATL Rohm Semiconductor
Description: MOSFET N-CH 45V 1.6A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT3, Grade: Automotive, Part Status: Active, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RTF016N05FRATL nach Preis ab 0.32 EUR bis 1.08 EUR
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RTF016N05FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 1.6A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT3 Grade: Automotive Part Status: Active Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 11029 Stücke: Lieferzeit 10-14 Tag (e) |
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RTF016N05FRATL | Hersteller : ROHM Semiconductor |
MOSFETs AECQ |
auf Bestellung 6786 Stücke: Lieferzeit 10-14 Tag (e) |
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