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RSR025N03TL Rohm Semiconductor
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Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.86 EUR |
100+ | 0.59 EUR |
500+ | 0.49 EUR |
1000+ | 0.42 EUR |
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Technische Details RSR025N03TL Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V.
Weitere Produktangebote RSR025N03TL
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Verfügbarkeit |
Preis ohne MwSt |
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RSR025N03 TL | Hersteller : ROHM |
auf Bestellung 27785 Stücke: Lieferzeit 21-28 Tag (e) |
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RSR025N03 TL | Hersteller : ROHM | 09+ |
auf Bestellung 21603 Stücke: Lieferzeit 21-28 Tag (e) |
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RSR025N03 TL | Hersteller : ROHM | SOT23-QY PB-FREE |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSR025N03TL | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
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RSR025N03TL | Hersteller : ROHM Semiconductor |
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Produkt ist nicht verfügbar |