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RSQ025P03HZGTR

RSQ025P03HZGTR ROHM Semiconductor

rsq025p03hzgtr-e.pdf Hersteller: ROHM Semiconductor
MOSFETs Pch -30V -2.5A Small Signal MOSFET - RSQ025P03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 2713 Stücke:
Lieferzeit 10-14 Tag (e)
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3+1.11 EUR
10+ 1.05 EUR
100+ 0.71 EUR
500+ 0.57 EUR
1000+ 0.5 EUR
3000+ 0.39 EUR
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Technische Details RSQ025P03HZGTR ROHM Semiconductor

Description: MOSFET P-CH 30V 2.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote RSQ025P03HZGTR nach Preis ab 0.5 EUR bis 1.76 EUR

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RSQ025P03HZGTR RSQ025P03HZGTR Hersteller : Rohm Semiconductor rsq025p03hzgtr-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1016 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
17+ 1.09 EUR
100+ 0.72 EUR
500+ 0.55 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 10
RSQ025P03HZGTR RSQ025P03HZGTR Hersteller : Rohm Semiconductor rsq025p03hzgtr-e.pdf Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Qualification: AEC-Q101
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