RS6P100BHTB1 Rohm Semiconductor
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.75 EUR |
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Technische Details RS6P100BHTB1 Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V.
Weitere Produktangebote RS6P100BHTB1 nach Preis ab 2.28 EUR bis 5.07 EUR
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RS6P100BHTB1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 100V 100A 8-Pin HSOP EP T/R |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6P100BHTB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 100V 100A 8-Pin HSOP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6P100BHTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSF Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V |
auf Bestellung 3468 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6P100BHTB1 | Hersteller : ROHM Semiconductor |
MOSFETs NCH 100V 100A MOSFET |
auf Bestellung 1639 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6P100BHTB1 | Hersteller : ROHM |
Description: ROHM - RS6P100BHTB1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0045 ohm, HSOP, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 104W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6P100BHTB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 100V 100A 8-Pin HSOP EP T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6P100BHTB1 | Hersteller : ROHM |
Description: ROHM - RS6P100BHTB1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0045 ohm, HSOP, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 104W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0045ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6P100BHTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSF Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 50 V |
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