RS6G100BGTB1 Rohm Semiconductor
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.06 EUR |
| 5000+ | 0.93 EUR |
| 10000+ | 0.83 EUR |
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Technische Details RS6G100BGTB1 Rohm Semiconductor
Description: NCH 40V 100A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V.
Weitere Produktangebote RS6G100BGTB1 nach Preis ab 1.28 EUR bis 3.29 EUR
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RS6G100BGTB1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 40V 100A 8-Pin HSOP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G100BGTB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 40V 100A 8-Pin HSOP EP T/R |
auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G100BGTB1 | Hersteller : ROHM Semiconductor |
MOSFETs RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching. |
auf Bestellung 4857 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G100BGTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
auf Bestellung 2474 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G100BGTB1 | Hersteller : ROHM |
Description: ROHM - RS6G100BGTB1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0026 ohm, HSOP, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 59W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G100BGTB1 | Hersteller : ROHM |
Description: ROHM - RS6G100BGTB1 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0026 ohm, HSOP, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 59W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G100BGTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 40V 100A, HSOP8, POWER MOSFE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V |
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