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RS3E135BNGZETB

RS3E135BNGZETB Rohm Semiconductor

rs3e135bngzetb-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
170+0.9 EUR
250+ 0.84 EUR
500+ 0.78 EUR
1000+ 0.72 EUR
2500+ 0.67 EUR
Mindestbestellmenge: 170
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Technische Details RS3E135BNGZETB Rohm Semiconductor

Description: MOSFET N-CHANNEL 30V 9.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V.

Weitere Produktangebote RS3E135BNGZETB nach Preis ab 0.67 EUR bis 1.69 EUR

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RS3E135BNGZETB RS3E135BNGZETB Hersteller : Rohm Semiconductor rs3e135bngzetb-e.pdf Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
170+0.9 EUR
250+ 0.84 EUR
500+ 0.78 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 170
RS3E135BNGZETB RS3E135BNGZETB Hersteller : Rohm Semiconductor rs3e135bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 2562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
13+ 1.37 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
RS3E135BNGZETB RS3E135BNGZETB Hersteller : ROHM Semiconductor rs3e135bngzetb-e.pdf MOSFET Nch 30V 13.5A Si MOSFET
auf Bestellung 2449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.69 EUR
10+ 1.38 EUR
100+ 1.08 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
2500+ 0.7 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2
RS3E135BNGZETB RS3E135BNGZETB Hersteller : Rohm Semiconductor rs3e135bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
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