RS3B V6G Taiwan Semiconductor
auf Bestellung 2638 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.45 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.23 EUR |
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Technische Details RS3B V6G Taiwan Semiconductor
Description: DIODE GEN PURP 100V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote RS3B V6G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RS3B V6G | Hersteller : Taiwan Semiconductor |
 150ns, 3A, 100V, Fast Recovery Rectifier |
Produkt ist nicht verfügbar |
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RS3B V6G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |