RS1KHE3_A/I Vishay General Semiconductor
auf Bestellung 6700 Stücke:
Lieferzeit 66-70 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.15 EUR |
| 7500+ | 0.14 EUR |
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Technische Details RS1KHE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote RS1KHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RS1KHE3_A/I | Hersteller : Vishay |
 Rectifier Diode Switching 800V 1A 500ns Automotive 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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RS1KHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |