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RS1DHE3_A/I VISHAY
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Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 7404 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
265+ | 0.27 EUR |
295+ | 0.24 EUR |
385+ | 0.19 EUR |
410+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RS1DHE3_A/I VISHAY
Description: DIODE GEN PURP 200V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RS1DHE3_A/I nach Preis ab 0.13 EUR bis 0.76 EUR
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RS1DHE3_A/I | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7404 Stücke: Lieferzeit 7-14 Tag (e) |
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RS1DHE3_A/I | Hersteller : Vishay General Semiconductor |
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auf Bestellung 5800 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1DHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6470 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1DHE3_A/I | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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RS1DHE3_A/I | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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RS1DHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |