RQ3P300BHTB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 100V 39A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.75 EUR |
| 6000+ | 1.68 EUR |
| 9000+ | 1.63 EUR |
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Technische Details RQ3P300BHTB1 Rohm Semiconductor
Description: NCH 100V 39A, HSMT8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V.
Weitere Produktangebote RQ3P300BHTB1 nach Preis ab 1.84 EUR bis 3.89 EUR
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RQ3P300BHTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 100V 39A, HSMT8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V |
auf Bestellung 14405 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3P300BHTB1 | Hersteller : ROHM Semiconductor |
MOSFET Nch 100V 39A, HSMT8, Power MOSFET. |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3P300BHTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 39A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: HSMT8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| RQ3P300BHTB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 39A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: HSMT8 |
Produkt ist nicht verfügbar |