RQ3C150BCTB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CHANNEL 20V 30A 8HSMT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.77 EUR |
| 6000+ | 0.73 EUR |
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Technische Details RQ3C150BCTB Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 30A 8HSMT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-HSMT (3.2x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V.
Weitere Produktangebote RQ3C150BCTB nach Preis ab 0.81 EUR bis 1.97 EUR
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RQ3C150BCTB | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 30A 8HSMT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 4.5V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-HSMT (3.2x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V |
auf Bestellung 9458 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ3C150BCTB | Hersteller : ROHM Semiconductor |
MOSFET Pch -20V -30A Si MOSFET |
auf Bestellung 3548 Stücke: Lieferzeit 10-14 Tag (e) |
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| RQ3C150BCTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8 Power dissipation: 20W Mounting: SMD Kind of package: reel; tape Case: HSMT8 Drain-source voltage: -20V Drain current: -37A On-state resistance: 14mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ3C150BCTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8 Power dissipation: 20W Mounting: SMD Kind of package: reel; tape Case: HSMT8 Drain-source voltage: -20V Drain current: -37A On-state resistance: 14mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A |
Produkt ist nicht verfügbar |