RQ1A070ZPTR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 12V 7A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.81 EUR |
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Technische Details RQ1A070ZPTR Rohm Semiconductor
Description: MOSFET P-CH 12V 7A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V.
Weitere Produktangebote RQ1A070ZPTR nach Preis ab 0.75 EUR bis 1.95 EUR
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RQ1A070ZPTR | Hersteller : ROHM Semiconductor |
MOSFET SW MOSFET MID PWR P-CH 12V -7A |
auf Bestellung 407 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ1A070ZPTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 12V 7A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V |
auf Bestellung 5267 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |