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RN4987FE,LF(CT

RN4987FE,LF(CT Toshiba Semiconductor and Storage

RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.069 EUR
8000+ 0.062 EUR
12000+ 0.059 EUR
20000+ 0.054 EUR
Mindestbestellmenge: 4000
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Technische Details RN4987FE,LF(CT Toshiba Semiconductor and Storage

Description: TRANS NPN/PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6.

Weitere Produktangebote RN4987FE,LF(CT nach Preis ab 0.053 EUR bis 0.44 EUR

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RN4987FE,LF(CT RN4987FE,LF(CT Hersteller : Toshiba Semiconductor and Storage RN4987FE_datasheet_en_20210818.pdf?did=19054&prodName=RN4987FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
auf Bestellung 21099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
81+ 0.22 EUR
130+ 0.14 EUR
500+ 0.099 EUR
1000+ 0.088 EUR
2000+ 0.078 EUR
Mindestbestellmenge: 50
RN4987FE,LF(CT RN4987FE,LF(CT Hersteller : Toshiba RN4987FE_datasheet_en_20210818-1140118.pdf Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
auf Bestellung 1781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.44 EUR
10+ 0.34 EUR
100+ 0.12 EUR
1000+ 0.077 EUR
4000+ 0.072 EUR
8000+ 0.056 EUR
24000+ 0.053 EUR
Mindestbestellmenge: 7