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RN4983FE,LXHF(CT

RN4983FE,LXHF(CT Toshiba Semiconductor and Storage

RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
43+ 0.41 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.14 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 31
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Technische Details RN4983FE,LXHF(CT Toshiba Semiconductor and Storage

Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RN4983FE,LXHF(CT nach Preis ab 0.11 EUR bis 0.64 EUR

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RN4983FE,LXHF(CT RN4983FE,LXHF(CT Hersteller : Toshiba RN4983FE_datasheet_en_20210818-2584099.pdf Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN + PNP Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-563)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.48 EUR
100+ 0.24 EUR
1000+ 0.15 EUR
4000+ 0.14 EUR
8000+ 0.11 EUR
Mindestbestellmenge: 5
RN4983FE,LXHF(CT RN4983FE,LXHF(CT Hersteller : Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
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