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RN2907,LF(CT

RN2907,LF(CT Toshiba Semiconductor and Storage

RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907 Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.051 EUR
Mindestbestellmenge: 3000
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Technische Details RN2907,LF(CT Toshiba Semiconductor and Storage

Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: US6.

Weitere Produktangebote RN2907,LF(CT nach Preis ab 0.053 EUR bis 0.43 EUR

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Preis ohne MwSt
RN2907,LF(CT RN2907,LF(CT Hersteller : Toshiba Semiconductor and Storage RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
61+ 0.29 EUR
125+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
RN2907,LF(CT RN2907,LF(CT Hersteller : Toshiba RN2907_datasheet_en_20211223-1627370.pdf Digital Transistors PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
auf Bestellung 2379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.43 EUR
10+ 0.29 EUR
100+ 0.12 EUR
1000+ 0.083 EUR
3000+ 0.065 EUR
9000+ 0.055 EUR
24000+ 0.053 EUR
Mindestbestellmenge: 7
RN2907,LF(CT Hersteller : Toshiba rn2909_datasheet_en_20191115.pdf Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
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