Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > RN2102MFV,L3F(CT
RN2102MFV,L3F(CT

RN2102MFV,L3F(CT Toshiba Semiconductor and Storage

docget.jsp?did=5883&prodName=RN2102MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.048 EUR
Mindestbestellmenge: 8000
Produktrezensionen
Produktbewertung abgeben

Technische Details RN2102MFV,L3F(CT Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote RN2102MFV,L3F(CT nach Preis ab 0.042 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN2102MFV,L3F(CT RN2102MFV,L3F(CT Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 15720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
85+ 0.21 EUR
158+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
2000+ 0.05 EUR
Mindestbestellmenge: 63
RN2102MFV,L3F(CT Hersteller : Toshiba RN2102MFV_datasheet_en_20210818-1116149.pdf Bipolar Transistors - Pre-Biased 10kohm 10kohm 0.1A SOT-723 50V
auf Bestellung 7450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+0.3 EUR
11+ 0.28 EUR
100+ 0.15 EUR
500+ 0.093 EUR
1000+ 0.065 EUR
2500+ 0.049 EUR
8000+ 0.042 EUR
Mindestbestellmenge: 10
RN2102MFV,L3F(CT Hersteller : Toshiba 32984751223935353298474367649225rn2101mfv_datasheet_en_20160914.pdf.pdf Silicon PNP Epitaxial PCT Process Bias Resistor built-in Transistor
Produkt ist nicht verfügbar