![RN1711,LF RN1711,LF](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4818/264%3B2-2L1A%3B%3B5.jpg)
RN1711,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.46 EUR |
56+ | 0.32 EUR |
115+ | 0.15 EUR |
500+ | 0.13 EUR |
1000+ | 0.089 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1711,LF Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: USV.
Weitere Produktangebote RN1711,LF nach Preis ab 0.067 EUR bis 0.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RN1711,LF | Hersteller : Toshiba |
![]() |
auf Bestellung 8899 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
RN1711,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: USV |
Produkt ist nicht verfügbar |