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RN1703,LF Toshiba
![RN1703_datasheet_en_20191003-1627331.pdf](/images/adobe-acrobat.png)
Digital Transistors NPN x 2 BRT, Q1BSR=22kOhm, Q1BER=22kOhm, Q2BSR=22kOhm, Q2BER=22kOhm, VCEO=50V, IC=0.1A
auf Bestellung 8449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 0.46 EUR |
10+ | 0.32 EUR |
100+ | 0.13 EUR |
1000+ | 0.09 EUR |
3000+ | 0.072 EUR |
9000+ | 0.058 EUR |
45000+ | 0.053 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RN1703,LF Toshiba
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: USV.
Weitere Produktangebote RN1703,LF nach Preis ab 0.089 EUR bis 0.46 EUR
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RN1703,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1703,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: USV |
Produkt ist nicht verfügbar |