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RN1102MFV,L3F

RN1102MFV,L3F Toshiba Semiconductor and Storage

RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.06 EUR
16000+ 0.049 EUR
Mindestbestellmenge: 8000
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Technische Details RN1102MFV,L3F Toshiba Semiconductor and Storage

Description: TRANS PREBIAS NPN 50V 0.1A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote RN1102MFV,L3F nach Preis ab 0.042 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RN1102MFV,L3F RN1102MFV,L3F Hersteller : Toshiba RN1102MFV_datasheet_en_20210818-1760677.pdf Digital Transistors Bias Resistor Built-in transistor
auf Bestellung 22843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.38 EUR
11+ 0.26 EUR
100+ 0.11 EUR
1000+ 0.063 EUR
2500+ 0.06 EUR
8000+ 0.048 EUR
48000+ 0.042 EUR
Mindestbestellmenge: 8
RN1102MFV,L3F RN1102MFV,L3F Hersteller : Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 28430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
RN1102MFV,L3F RN1102MFV,L3F Hersteller : Toshiba rn1102mfv_datasheet_en_20210818.pdf Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R
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