RJP60F5DPM-00#T1

RJP60F5DPM-00#T1 Renesas Electronics Corporation


rjp60f5dpm-datasheet Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 600V 80A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 53ns/90ns
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 45 W
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Technische Details RJP60F5DPM-00#T1 Renesas Electronics Corporation

Description: IGBT TRENCH 600V 80A TO3PFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-3PFM, IGBT Type: Trench, Td (on/off) @ 25°C: 53ns/90ns, Test Condition: 400V, 30A, 5Ohm, 15V, Gate Charge: 74 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 45 W.

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RJP60F5DPM-00#T1 Hersteller : Renesas Electronics REN_r07ds0587ej0200_rjp60f5dpm_DST_20120531-1999322.pdf IGBT Transistors Power Module - Lead Free
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