RJP60D0DPK-00#T0

RJP60D0DPK-00#T0 Renesas Electronics Corporation


rjp60d0dpk-datasheet Hersteller: Renesas Electronics Corporation
Description: IGBT 600V 45A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 140 W
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Technische Details RJP60D0DPK-00#T0 Renesas Electronics Corporation

Description: IGBT 600V 45A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 35ns/90ns, Test Condition: 300V, 22A, 5Ohm, 15V, Gate Charge: 45 nC, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 140 W.

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RJP60D0DPK-00#T0 Hersteller : Renesas Electronics REN_r07ds0166ej_rjp60d0dpk_DST_20100713-1999253.pdf IGBT Transistors Power Module - Lead Free
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