RJK03M2DPA-00#J5A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 30V 45A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.2 EUR |
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Technische Details RJK03M2DPA-00#J5A Renesas Electronics Corporation
Description: MOSFET N-CH 30V 45A 8WPAK, Packaging: Tape & Reel (TR), Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V, Power Dissipation (Max): 40W (Tc), Supplier Device Package: 8-WPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V.
Weitere Produktangebote RJK03M2DPA-00#J5A nach Preis ab 1.36 EUR bis 4.15 EUR
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RJK03M2DPA-00#J5A | Hersteller : Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 45A 8WPAK Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK03M2DPA-00#J5A | Hersteller : Renesas Electronics |
MOSFET POWER TRANSISTOR BEAM2 MOSFET 30V WPAK |
Produkt ist nicht verfügbar |