RGWS80TS65GC13 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.01 EUR |
30+ | 5.71 EUR |
120+ | 4.75 EUR |
510+ | 4.06 EUR |
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Technische Details RGWS80TS65GC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/114ns, Switching Energy: 700µJ (on), 660µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 83 nC, Current - Collector (Ic) (Max): 71 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 202 W.
Weitere Produktangebote RGWS80TS65GC13 nach Preis ab 4.26 EUR bis 10.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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RGWS80TS65GC13 | Hersteller : ROHM Semiconductor | IGBTs TO247 650V 40A TRNCH |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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RGWS80TS65GC13 | Hersteller : ROHM |
Description: ROHM - RGWS80TS65GC13 - IGBT, 71 A, 2 V, 202 W, 650 V, TO-247GE, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V usEccn: EAR99 euEccn: NLR Verlustleistung: 202W Bauform - Transistor: TO-247GE Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 71A SVHC: Lead (23-Jan-2024) |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |