RGW50TK65GVC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 30A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
Description: IGBT TRNCH FIELD 650V 30A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 67 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 5.97 EUR |
30+ | 4.73 EUR |
120+ | 4.06 EUR |
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Technische Details RGW50TK65GVC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 30A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 35ns/102ns, Switching Energy: 390µJ (on), 430µJ (off), Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 73 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 67 W.
Weitere Produktangebote RGW50TK65GVC11 nach Preis ab 4.17 EUR bis 8.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RGW50TK65GVC11 | Hersteller : ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW50TK65GVC11 | Hersteller : ROHM |
Description: ROHM - RGW50TK65GVC11 - IGBT, 30 A, 1.5 V, 67 W, 650 V, TO-3PFM, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 67W Bauform - Transistor: TO-3PFM Anzahl der Pins: 3Pins Produktpalette: Trench Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |