RGTVX6TS65GC11 ROHM Semiconductor
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.8 EUR |
| 25+ | 6 EUR |
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Technische Details RGTVX6TS65GC11 ROHM Semiconductor
Description: IGBT TRENCH FLD 650V 144A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 45ns/201ns, Switching Energy: 2.65mJ (on), 1.8mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 171 nC, Current - Collector (Ic) (Max): 144 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 320 A, Power - Max: 404 W.
Weitere Produktangebote RGTVX6TS65GC11 nach Preis ab 5.56 EUR bis 9.12 EUR
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RGTVX6TS65GC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FLD 650V 144A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/201ns Switching Energy: 2.65mJ (on), 1.8mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 171 nC Current - Collector (Ic) (Max): 144 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 320 A Power - Max: 404 W |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGTVX6TS65GC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 202W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 320A Mounting: THT Gate charge: 171nC Kind of package: tube Turn-on time: 83ns Turn-off time: 298ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTVX6TS65GC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 202W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 320A Mounting: THT Gate charge: 171nC Kind of package: tube Turn-on time: 83ns Turn-off time: 298ns |
Produkt ist nicht verfügbar |