RGTH80TS65DGC11 ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Technische Details RGTH80TS65DGC11 ROHM SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3, Mounting: THT, Kind of package: tube, Case: TO247-3, Pulsed collector current: 160A, Turn-on time: 84ns, Turn-off time: 194ns, Type of transistor: IGBT, Power dissipation: 117W, Gate-emitter voltage: ±30V, Collector-emitter voltage: 650V, Collector current: 40A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 79nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RGTH80TS65DGC11
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Verfügbarkeit |
Preis ohne MwSt |
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RGTH80TS65DGC11 | Hersteller : Rohm Semiconductor | Description: IGBT TRNCH FIELD 650V 70A TO247N |
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RGTH80TS65DGC11 | Hersteller : ROHM Semiconductor | IGBT Transistors 650V 40A IGBT Stop Trench |
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RGTH80TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 84ns Turn-off time: 194ns Type of transistor: IGBT Power dissipation: 117W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 79nC |
Produkt ist nicht verfügbar |