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RGT8BM65DGTL1

RGT8BM65DGTL1 Rohm Semiconductor


datasheet?p=RGT8BM65D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: SHORT-CIRCUIT TOLERANCE, 650V 4A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.06 EUR
Mindestbestellmenge: 2500
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Technische Details RGT8BM65DGTL1 Rohm Semiconductor

Description: SHORT-CIRCUIT TOLERANCE, 650V 4A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-252GE, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 62 W.

Weitere Produktangebote RGT8BM65DGTL1 nach Preis ab 1 EUR bis 2.52 EUR

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Preis ohne MwSt
RGT8BM65DGTL1 RGT8BM65DGTL1 Hersteller : ROHM Semiconductor datasheet?p=RGT8BM65D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key IGBT Transistors 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.52 EUR
10+ 2.06 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
2500+ 1.05 EUR
5000+ 1 EUR
Mindestbestellmenge: 2
RGT8BM65DGTL1 RGT8BM65DGTL1 Hersteller : Rohm Semiconductor datasheet?p=RGT8BM65D&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: SHORT-CIRCUIT TOLERANCE, 650V 4A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.24 EUR
25+ 2.13 EUR
100+ 1.75 EUR
250+ 1.63 EUR
500+ 1.44 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 7