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RGT00TS65DGC11 Rohm Semiconductor
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Description: 650V 50A FIELD STOP TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/137ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 277 W
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.96 EUR |
30+ | 2.37 EUR |
120+ | 1.95 EUR |
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Technische Details RGT00TS65DGC11 Rohm Semiconductor
Description: 650V 50A FIELD STOP TRENCH IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 42ns/137ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 277 W.
Weitere Produktangebote RGT00TS65DGC11 nach Preis ab 5.53 EUR bis 9.05 EUR
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RGT00TS65DGC11 | Hersteller : ROHM Semiconductor |
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auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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