RGS60TS65DHRC11 ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.55 EUR |
| 14+ | 5.15 EUR |
| 450+ | 4.95 EUR |
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Technische Details RGS60TS65DHRC11 ROHM SEMICONDUCTOR
Description: IGBT TRNCH FIELD 650V 56A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/104ns, Switching Energy: 660µJ (on), 810µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 36 nC, Current - Collector (Ic) (Max): 56 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 223 W.
Weitere Produktangebote RGS60TS65DHRC11 nach Preis ab 5.15 EUR bis 7.97 EUR
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RGS60TS65DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS60TS65DHRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 56A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/104ns Switching Energy: 660µJ (on), 810µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 223 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60TS65DHRC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60TS65DHRC11 | Hersteller : ROHM |
Description: ROHM - RGS60TS65DHRC11 - IGBT, 56 A, 1.65 V, 223 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 223W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 56A SVHC: Lead (23-Jan-2024) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |