RGS60NL65DHRBTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 59A TO263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/94ns
Switching Energy: 650µJ (on), 790µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Grade: Automotive
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 228 W
Qualification: AEC-Q101
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.45 EUR |
| 10+ | 7.59 EUR |
| 25+ | 7.18 EUR |
| 100+ | 6.22 EUR |
| 250+ | 5.9 EUR |
| 500+ | 5.3 EUR |
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Technische Details RGS60NL65DHRBTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 59A TO263L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/94ns, Switching Energy: 650µJ (on), 790µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 36 nC, Grade: Automotive, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 228 W, Qualification: AEC-Q101.
Weitere Produktangebote RGS60NL65DHRBTL nach Preis ab 3.77 EUR bis 8.54 EUR
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RGS60NL65DHRBTL | Hersteller : ROHM Semiconductor |
IGBTs 8 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS60NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification. |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60NL65DHRBTL | Hersteller : ROHM |
Description: ROHM - RGS60NL65DHRBTL - IGBT, AEC-Q101, 59 A, 1.65 V, 228 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 228W Bauform - Transistor: TO-263L Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 59A SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS60NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS60NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS60NL65DHRBTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 59A TO263L Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/94ns Switching Energy: 650µJ (on), 790µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Grade: Automotive Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 228 W Qualification: AEC-Q101 |
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