RGF1J-E3/67A VISHAY
Hersteller: VISHAYCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AB,SMC; Ufmax: 1.3V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Load current: 1A
Max. forward voltage: 1.3V
Reverse recovery time: 250ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4709 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 195+ | 0.37 EUR |
| 215+ | 0.33 EUR |
| 280+ | 0.26 EUR |
| 300+ | 0.24 EUR |
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Technische Details RGF1J-E3/67A VISHAY
Description: DIODE GEN PURP 600V 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote RGF1J-E3/67A nach Preis ab 0.24 EUR bis 0.95 EUR
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RGF1J-E3/67A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AB,SMC; Ufmax: 1.3V Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO214AB; SMC Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: fast switching Capacitance: 8.5pF Load current: 1A Max. forward voltage: 1.3V Reverse recovery time: 250ns |
auf Bestellung 4709 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1J-E3/67A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 19500 Stücke: Lieferzeit 10-14 Tag (e) |
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RGF1J-E3/67A | Hersteller : Vishay General Semiconductor |
Diodes - General Purpose, Power, Switching 1 Amp 600 Volt 250ns 30 Amp IFSM |
auf Bestellung 6391 Stücke: Lieferzeit 10-14 Tag (e) |
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RGF1J-E3/67A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 19622 Stücke: Lieferzeit 10-14 Tag (e) |
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