Produkte > HARRIS CORPORATION > RFH30N15

RFH30N15 Harris Corporation

HRISD017-4-715.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.30 EUR
Mindestbestellmenge: 77
Produktrezensionen
Produktbewertung abgeben

Technische Details RFH30N15 Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-218-3 Isolated Tab, TO-218AC, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-218 Isolated, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.

Weitere Produktangebote RFH30N15

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RFH30N15 HRISD017-4-715.pdf?t.download=true&u=5oefqw
auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)