RE1C001ZPTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 20V 100MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.076 EUR |
| 6000+ | 0.07 EUR |
| 9000+ | 0.058 EUR |
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Technische Details RE1C001ZPTL Rohm Semiconductor
Description: MOSFET P-CH 20V 100MA EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V.
Weitere Produktangebote RE1C001ZPTL nach Preis ab 0.038 EUR bis 0.46 EUR
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RE1C001ZPTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -100mA Pulsed drain current: -400mA Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±10V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3060 Stücke: Lieferzeit 7-14 Tag (e) |
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RE1C001ZPTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -100mA Pulsed drain current: -400mA Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±10V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 3060 Stücke: Lieferzeit 14-21 Tag (e) |
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RE1C001ZPTL | Hersteller : ROHM Semiconductor |
MOSFET 1.2V Drive Pch MOSFET |
auf Bestellung 511 Stücke: Lieferzeit 10-14 Tag (e) |
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RE1C001ZPTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 100MA EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V |
auf Bestellung 10060 Stücke: Lieferzeit 10-14 Tag (e) |
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