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RCJ050N25TL

RCJ050N25TL Rohm Semiconductor

datasheet?p=RCJ050N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 250V 5A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.61 EUR
Mindestbestellmenge: 1000
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Technische Details RCJ050N25TL Rohm Semiconductor

Description: MOSFET N-CH 250V 5A LPT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V, Power Dissipation (Max): 1.56W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Weitere Produktangebote RCJ050N25TL nach Preis ab 0.65 EUR bis 1.65 EUR

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Preis ohne MwSt
RCJ050N25TL RCJ050N25TL Hersteller : ROHM Semiconductor datasheet?p=RCJ050N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs 10V Drive Nch Power MOSFET
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.65 EUR
10+ 1.35 EUR
100+ 1.05 EUR
500+ 0.89 EUR
1000+ 0.73 EUR
2000+ 0.68 EUR
5000+ 0.65 EUR
Mindestbestellmenge: 2
RCJ050N25TL RCJ050N25TL Hersteller : Rohm Semiconductor datasheet?p=RCJ050N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 5A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
RCJ050N25TL RCJ050N25TL Hersteller : Rohm Semiconductor datasheet?p=RCJ050N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 5A LPT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.36Ohm @ 2.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar