RBN40H65T1FPQ-A0#CB0 Renesas Electronics
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 9.4 EUR |
| 25+ | 8.89 EUR |
| 100+ | 7.71 EUR |
| 250+ | 7.3 EUR |
| 500+ | 6.23 EUR |
| 1000+ | 5.35 EUR |
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Technische Details RBN40H65T1FPQ-A0#CB0 Renesas Electronics
Description: IGBT TRENCH 650V 80A TO247A, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247A, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/96ns, Switching Energy: 620µJ (on), 520µJ (off), Test Condition: 400V, 40A, 16Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 185 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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RBN40H65T1FPQ-A0#CB0 | Hersteller : Renesas Electronics Corporation |
 Description: IGBT TRENCH 650V 80A TO247APackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247A IGBT Type: Trench Td (on/off) @ 25°C: 22ns/96ns Switching Energy: 620µJ (on), 520µJ (off) Test Condition: 400V, 40A, 16Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 185 W |
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