RAF040P01TCL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
9000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RAF040P01TCL Rohm Semiconductor
Description: ROHM - RAF040P01TCL - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.022 ohm, TUMT, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 800mW, Bauform - Transistor: TUMT, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.022ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote RAF040P01TCL nach Preis ab 0.26 EUR bis 0.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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RAF040P01TCL | Hersteller : ROHM Semiconductor | MOSFETs MOSFET P-CH 1.5V 4A |
auf Bestellung 10450 Stücke: Lieferzeit 10-14 Tag (e) |
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RAF040P01TCL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V |
auf Bestellung 18988 Stücke: Lieferzeit 10-14 Tag (e) |
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RAF040P01TCL | Hersteller : ROHM |
Description: ROHM - RAF040P01TCL - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.022 ohm, TUMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: TUMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1546 Stücke: Lieferzeit 14-21 Tag (e) |
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RAF040P01TCL | Hersteller : ROHM |
Description: ROHM - RAF040P01TCL - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.022 ohm, TUMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: TUMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1546 Stücke: Lieferzeit 14-21 Tag (e) |
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RAF040P01TCL |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RAF040P01TCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -16A; 800mW; TUMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 37nC Kind of channel: enhanced Pulsed drain current: -16A Case: TUMT3 Drain-source voltage: -12V Drain current: -4A On-state resistance: 68mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RAF040P01TCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -16A; 800mW; TUMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 37nC Kind of channel: enhanced Pulsed drain current: -16A Case: TUMT3 Drain-source voltage: -12V Drain current: -4A On-state resistance: 68mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |