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R6524KNX3C16

R6524KNX3C16 ROHM Semiconductor

datasheet?p=R6524KNX3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET 650V 24A TO-220FM, High-speed switching Power MOSFET
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.01 EUR
10+ 7.2 EUR
100+ 5.9 EUR
500+ 5.02 EUR
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Technische Details R6524KNX3C16 ROHM Semiconductor

Description: 650V 24A, TO-220AB, HIGH-SPEED S, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V, Power Dissipation (Max): 253W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.

Weitere Produktangebote R6524KNX3C16 nach Preis ab 5.9 EUR bis 8.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R6524KNX3C16 R6524KNX3C16 Hersteller : Rohm Semiconductor datasheet?p=R6524KNX3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.01 EUR
10+ 7.2 EUR
100+ 5.9 EUR
Mindestbestellmenge: 3
R6524KNX3C16 R6524KNX3C16 Hersteller : Rohm Semiconductor datasheet?p=R6524KNX3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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