R6520KNZ4C13 Rohm Semiconductor
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 7.36 EUR |
| 26+ | 6.01 EUR |
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Technische Details R6520KNZ4C13 Rohm Semiconductor
Description: MOSFET N-CH 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 5V @ 630µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote R6520KNZ4C13 nach Preis ab 7.28 EUR bis 13.57 EUR
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R6520KNZ4C13 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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R6520KNZ4C13 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 650V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 5V @ 630µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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R6520KNZ4C13 | Hersteller : ROHM Semiconductor |
MOSFET Nch 650V 20A Power MOSFET. R6520KNZ4 is a power MOSFET for switching applications. |
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