R6070JNZ4C13 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 600V 70A TO-247, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V
Power Dissipation (Max): 770W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 8.92 EUR |
| 30+ | 7.12 EUR |
| 120+ | 6.6 EUR |
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Technische Details R6070JNZ4C13 Rohm Semiconductor
Description: 600V 70A TO-247, PRESTOMOS WITH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V, Power Dissipation (Max): 770W (Tc), Vgs(th) (Max) @ Id: 7V @ 3mA, Supplier Device Package: TO-247G, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V.
Weitere Produktangebote R6070JNZ4C13 nach Preis ab 16.33 EUR bis 16.65 EUR
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R6070JNZ4C13 | Hersteller : ROHM Semiconductor |
MOSFETs 600V 70A TO-247, PrestoMOS with integrated high-speed diode |
auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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