R6024ENXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 600V 24A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.73 EUR |
| 50+ | 6.91 EUR |
| 100+ | 5.93 EUR |
| 500+ | 5.27 EUR |
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Technische Details R6024ENXC7G Rohm Semiconductor
Description: 600V 24A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote R6024ENXC7G nach Preis ab 3.22 EUR bis 8.78 EUR
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R6024ENXC7G | Hersteller : ROHM Semiconductor |
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| R6024ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 74W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 74W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| R6024ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 72A; 74W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 72A Power dissipation: 74W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.32Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |