R6020KNZC8 Rohm Semiconductor
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 4.21 EUR |
| 50+ | 3.91 EUR |
| 100+ | 3.64 EUR |
| 250+ | 3.39 EUR |
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Technische Details R6020KNZC8 Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 20A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-3PF, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote R6020KNZC8
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R6020KNZC8 | Hersteller : ROHM Semiconductor |
 MOSFET Nch 600V 20A Si MOSFET |
auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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R6020KNZC8 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CHANNEL 600V 20A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
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