R6020ENXC7G Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 600V 20A TO-220FM, LOW-NOISE POW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.85 EUR |
| 50+ | 2.28 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.69 EUR |
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Technische Details R6020ENXC7G Rohm Semiconductor
Description: 600V 20A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote R6020ENXC7G nach Preis ab 1.89 EUR bis 8.41 EUR
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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R6020ENXC7G | Hersteller : Rohm Semiconductor |
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R6020ENXC7G | Hersteller : ROHM Semiconductor |
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| R6020ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| R6020ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 60A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |