R6015ENXC7G Rohm Semiconductor
auf Bestellung 947 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 2.84 EUR |
| 67+ | 2.21 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.69 EUR |
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Technische Details R6015ENXC7G Rohm Semiconductor
Description: 600V 15A TO-220FM, LOW-NOISE POW, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220FM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Weitere Produktangebote R6015ENXC7G nach Preis ab 2.27 EUR bis 5.47 EUR
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R6015ENXC7G | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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R6015ENXC7G | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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R6015ENXC7G | Hersteller : ROHM Semiconductor |
MOSFETs 600V POWER MOSFET |
auf Bestellung 3941 Stücke: Lieferzeit 10-14 Tag (e) |
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R6015ENXC7G | Hersteller : Rohm Semiconductor |
Description: 600V 15A TO-220FM, LOW-NOISE POW Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| R6015ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 30A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| R6015ENXC7G | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 30A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |