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R6006KND3TL1

R6006KND3TL1 Rohm Semiconductor

r6006knd3tl1-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
100+1.53 EUR
105+ 1.41 EUR
250+ 1.3 EUR
500+ 1.21 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 100
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Technische Details R6006KND3TL1 Rohm Semiconductor

Description: MOSFET N-CH 600V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Weitere Produktangebote R6006KND3TL1 nach Preis ab 1.63 EUR bis 3.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
R6006KND3TL1 R6006KND3TL1 Hersteller : Rohm Semiconductor r6006knd3tl1-e.pdf Description: MOSFET N-CH 600V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.43 EUR
10+ 2.85 EUR
100+ 2.27 EUR
500+ 1.92 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 6
R6006KND3TL1 Hersteller : ROHM SEMICONDUCTOR r6006knd3tl1-e.pdf R6006KND3TL1 SMD N channel transistors
Produkt ist nicht verfügbar
R6006KND3TL1 R6006KND3TL1 Hersteller : Rohm Semiconductor r6006knd3tl1-e.pdf Description: MOSFET N-CH 600V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
R6006KND3TL1 R6006KND3TL1 Hersteller : ROHM Semiconductor r6006knd3tl1-e.pdf MOSFETs Nch 600V 6A Power MOSFET. R6006KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Produkt ist nicht verfügbar