R1LV0816ASD-5SI#B0 Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 42.76 EUR |
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Technische Details R1LV0816ASD-5SI#B0 Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II, Packaging: Tray, Package / Case: 52-TFSOP (0.350", 8.89mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 52-TSOP II, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 1M x 8, 512K x 16, DigiKey Programmable: Not Verified.
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R1LV0816ASD-5SI#B0 | Hersteller : Renesas |
SRAM Chip Async Single 3V 8M-bit 1M/512K x 8/16-bit 55ns 52-Pin TSOP-II Tray |
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R1LV0816ASD-5SI#B0 | Hersteller : Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 52TSOP II Packaging: Tray Package / Case: 52-TFSOP (0.350", 8.89mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Memory Format: SRAM Supplier Device Package: 52-TSOP II Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 1M x 8, 512K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |