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QS6K1FRATR

QS6K1FRATR Rohm Semiconductor

datasheet?p=QS6K1FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
Mindestbestellmenge: 3000
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Technische Details QS6K1FRATR Rohm Semiconductor

Description: MOSFET 2N-CH 30V 1A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V, Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote QS6K1FRATR nach Preis ab 0.29 EUR bis 1.01 EUR

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QS6K1FRATR QS6K1FRATR Hersteller : Rohm Semiconductor 440338344611472qs6k1fra.pdf Trans MOSFET N-CH Si 30V 1A Automotive 6-Pin TSMT T/R
auf Bestellung 2280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
380+0.4 EUR
500+ 0.37 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 380
QS6K1FRATR QS6K1FRATR Hersteller : ROHM Semiconductor qs6k1fra-1915908.pdf MOSFETs 0.26Rds(on) 1.7Qg
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.65 EUR
10+ 0.57 EUR
100+ 0.4 EUR
500+ 0.33 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 5
QS6K1FRATR QS6K1FRATR Hersteller : Rohm Semiconductor datasheet?p=QS6K1FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.33 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 28
QS6K1FRATR QS6K1FRATR Hersteller : Rohm Semiconductor 440338344611472qs6k1fra.pdf Trans MOSFET N-CH Si 30V 1A Automotive 6-Pin TSMT T/R
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
150+1.01 EUR
230+ 0.64 EUR
335+ 0.42 EUR
337+ 0.4 EUR
500+ 0.32 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 150
QS6K1FRATR Hersteller : ROHM SEMICONDUCTOR datasheet?p=QS6K1FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key QS6K1FRATR Multi channel transistors
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