![QS6J11TR QS6J11TR](https://static6.arrow.com/aropdfconversion/arrowimages/429a99502ea4402efcb96f10b02ad3ba8ccc3a2d/tsmt6.jpg)
auf Bestellung 3978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
474+ | 0.32 EUR |
564+ | 0.26 EUR |
1000+ | 0.24 EUR |
2000+ | 0.23 EUR |
3000+ | 0.21 EUR |
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Technische Details QS6J11TR Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active.
Weitere Produktangebote QS6J11TR nach Preis ab 0.32 EUR bis 0.98 EUR
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QS6J11TR | Hersteller : Rohm Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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QS6J11TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J11TR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active |
auf Bestellung 5580 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J11TR | Hersteller : ROHM Semiconductor |
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auf Bestellung 2063 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6J11TR | Hersteller : Rohm Semiconductor |
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auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
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QS6J11TR |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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QS6J11TR | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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QS6J11TR | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |