Technische Details QS5U16TR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A, Type of transistor: N-MOSFET + Schottky, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.5A, Pulsed drain current: 2A, Power dissipation: 1.25W, Case: TSOT25, Gate-source voltage: ±12V, On-state resistance: 154mΩ, Mounting: SMD, Gate charge: 2.8nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote QS5U16TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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QS5U16TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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QS5U16TR | Hersteller : Rohm Semiconductor | Description: MOSFET N-CH 30V 2A TSMT5 |
Produkt ist nicht verfügbar |
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QS5U16TR | Hersteller : ROHM Semiconductor | MOSFET N-CH 30V 2A |
Produkt ist nicht verfügbar |
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QS5U16TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |